Ukunemba-I-Machined Graphite Plate

Ukunemba-I-Machined Graphite Plate
Imininingwane:
Ukunemba-amapuleti e-graphite enziwe ngomshini akhiwe ngezinto eziyisisekelo-ezihlanzekile, ezinokubekezelela okungu-±0.01mm, zidlula ukugqwala kanye{3}}nokumelana{3}}nokushisa okuphezulu, ama-electronics afaneleka, i-metallurgy nezinye izinkambu, athobelana namazinga e-ASTM/ISO.
I-MOQ:100pc
Material:igraphite yemvelo
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Incazelo
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I-Precision-I-Machined Graphite Plate iwumkhiqizo we-graphite owenziwe ngomshini wokunemba okuphezulu, onokubekezelelana okuqinile kwe-dimensional, ukuqedwa kwendawo okushelelayo kanye nomumo wejiyomethri oyinkimbinkimbi. Ihlanganisa izakhiwo ezinhle kakhulu ze-graphite nobuchwepheshe bokunemba kwemishini, futhi isetshenziswa kabanzi emikhakheni yezimboni enembayo ephezulu.

 

Izindawo zokufaka izicelo eziyinhloko

 

1. Imboni ye-semiconductor/pv

  • Ukukhiqizwa kwe-wafer: inkomishi yokumunca i-electrostatic, izingxenye zesithando somlilo, ipuleti elithwala i-CVD.
  • Amaseli e-Photovoltaic: Isikebhe se-PECVD se-graphite, isikhunta esicwebezelayo se-silicon.
  • I-epitaxy ye-LED: I-MOCVD graphite substrate.

2. I-Electron beam processing -- impahla ye-electrode: i-graphite ehlanzekile, esetshenziselwa ukucutshungulwa kwesikhunta ngokunemba.

3. Isithando somlilo esisezimbonini/imishini yokushisa ephezulu -- izingxenye zensimu eshisayo yekristalu eyodwa, i-graphite fixture ye-vacuum sintering furnace, isitimela somhlahlandlela.

4. I-Fuel cell/energy entsha -- Ipuleti le-Fuel cell bipolar, isikhunta se-lithium anode sintering.

5. Amathuluzi/ucwaningo olunembayo -- Isivikelo se-graphite se-optical coating, inkundla yesampula ye-X-ray diffractometer, izingxenye zesakhiwo ezimelana nezinga lokushisa eliphezulu le-aerospace.

Imingcele Yezobuchwepheshe

 

Isigaba sepharamitha

Ipharamitha ethize (Iyunithi)

Ibanga Elijwayelekile

Okubalulekile

I-Carbon Purity (%)

99.92–99.97 (Ibanga Lemboni); Kukhulu noma kulingana no-99.99 (Ibanga Le-Semiconductor)

Ukuminyana (g/cm³)

1.82–1.94

Okuqukethwe komlotha (ppm)

Ngaphansi noma kulingana nama-200 (Ibanga Lemboni); Ngaphansi noma kulingana nama-80 (Ibanga Le-Semiconductor)

Usayizi Wezinhlayiyana (μm)

4–12 (Uhlamvu Oluhle); 12–20 (Okusanhlamvu Okumaphakathi)

Ukusebenza Komshini

Amandla e-Flexural (MPa)

35–60

Amandla Acindezelayo (MPa)

70–110

Ukuqina Kwasogwini (HS)

50–75

I-Elastic Modulus (GPA)

8–12

Ukusebenza Okushisayo

I-Thermal Conductivity (W/m·K)

100–180 (Izinga lokushisa Legumbi)

I-Thermal Expansion Coefficient (10⁻⁶/ degree)

2.8–3.2 (25–800 degree)

Izinga Lokushisa Eliphezulu Lokusebenza (℃)

1800–2200 (I-Inert Atmosphere); 450–600 (Indawo Yomoya)

I-Thermal Shock Resistance (iziqu)

Kukhulu noma kulingana no-500 (Umehluko Wezinga Lokushisa)

Ukusebenza Kagesi

Ukumelana Nomthamo (μΩ·m)

7–12

Amandla e-Dielectric (kV/mm)

Kukhulu noma kulingana no-10

Ukunemba Kwemishini

Ukubekezelela I-Dimensional – Ubude/Ububanzi (mm)

±0.05 (Ibanga Elijwayelekile); ±0.01 (Ibanga Elinembile)

Ukubekezelela Dimensional – Ukuqina (mm)

±0.02 (Ibanga Elijwayelekile); ±0.005 (Ibanga Lokubona)

Ukucaba (mm/m)

Ngaphansi noma kulingana no-0.05

Ukuqina Kobuso (Ra, μm)

0.2–0.8

Ukumelana Nemvelo

I-Acid Corrosion Mass Loss (%)

Ngaphansi noma kulingana no-0.3 (pH 1–3, 1000h)

I-Alkali Corrosion Mass Loss (%)

Ngaphansi noma kulingana no-0.5 (pH 11–14, 1000h)

Izinga le-Oxidation (g/m²·h)

Ngaphansi noma kulingana no-0.01 (Indawo Yomoya, 400 degree)

Imikhiqizo isekela ukwenza ngokwezifiso komuntu siqu

Izakhiwo zomzimba namakhemikhali

 

  1. I-electrical conductivity: Amashidi e-graphite abonisa ukusebenza kahle kukagesi, ngokuyinhloko ngenxa yesakhiwo sawo esinengqimba esingu-π{{0}π esizinzile esakhiwe amafu e-electron e-π kanye{1}}ne-carbon covalent bond. Lokhu kulungiselelwa kunika amandla ukuthuthwa kwe-electron okusebenzayo ngaphakathi kwempahla, okuholela ekumelaneni okuphansi ngokukhethekile okungu-10^-6 Ω·m. Ngakho-ke, i-graphite isebenza njengento efanelekile ye-electrode.
  2. I-Thermal conductivity: Ipuleti le-graphite libuye libe ne-conductivity enhle kakhulu yokushisa, ukuqhutshwa kwayo okushisayo kuphakeme kunensimbi, insimbi, umthofu nezinye izinto zensimbi. Lokhu kungenxa yesakhiwo esinezingqimba kanye nesakhiwo sekristalu esihlelwe kakhulu se-graphite plate, ukuze amandla okushisa adluliselwe ngokuphumelelayo ngokusebenzisa ukudlidliza phakathi kwezingqimba.
  3. Izakhiwo zemishini: Ipuleti le-graphite linamandla aphezulu, ukuguquguquka okuphezulu kanye nokumelana nokukhala. I-modulus yayo Encane namandla esivuno angafinyelela ku-1 TPa kanye no-130 GPa ngokulandelanayo, okuyizikhathi ezingaphezu kwezingamashumi amabili kunezensimbi. Lawa mandla aphezulu enza i-graphite plate ibe nokuzinza okuhle kakhulu ekucindezelweni okuphezulu kanye nemvelo yokushisa ephezulu.
  4. Ukuzinza kwamakhemikhali: I-carbon-carbon bond ye-graphite plate inamandla ebhondi ephezulu kanye nokusebenza kabusha kwamakhemikhali aphansi, futhi inokumelana okuphezulu kumakhemikhali amaningi. Ama-asidi ambalwa kuphela nama-alkali angakwazi ukugqwala, ngakho-ke ipuleti le-graphite lisetshenziswa kakhulu ku-reactor yamakhemikhali kanye ne-catalyst carrier.

I-Precision{{0}I-Machined Graphite Plate isiphenduke into ebaluleke kakhulu-ekwenziweni okuphezulu ngenxa yokunemba kwayo okuphezulu, ukumelana nemvelo okudlulele kanye nokwenza ngokwezifiso okuqinile. Ukuze kuqinisekiswe ukusebenza okuhle kakhulu, ukuhlanzeka kwe-graphite, usayizi wezinhlayiyana, indlela yokucubungula kanye nokwelashwa kwendawo kufanele kucatshangelwe ngokucophelela lapho kukhethwa i-graphite.

product-800-800
product-800-800

 

Amashadi ashisayo: ukunemba-okunomshini we-graphite plate, ukunemba kwe-China{1}}abakhiqizi be-graphite plate abangomshini

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