Izicaciso ze-High-Purity Graphite yamaSemiconductors

Usayizi wezinhlayiyana usukela ku-5 kuya ku-45 microns, okuqukethwe kwekhabhoni phakathi kuka-99% no-99.995%.

Izinkomba Zobuchwepheshe

Imodeli nepharamitha	LC-D5	LC{{0}D10	LC{{0}D35	I-LC-D45
Usayizi Wezinhlayiyana D50 (μm)	5	10	35	45
Indawo Eqondile Yokuphezulu (m²/g)	4.78	3.56	2.38	1.15
Ukungazweli (Ω·m)	0.9	2.3×10⁻²	6.9×10⁻³	5.8×10⁻³
Umswakama (%)	<0.2	<0.2	<0.2	<0.2
Okuqukethwe kwekhabhoni (%)	99.99	99.995	99.995	99.995
Okuqukethwe Umlotha (%)	<0.01	<0.01	<0.01	<0.01
Okuqukethwe Okuguquguqukayo (%)	<0.05	<0.05	<0.05	<0.05
Fe Okuqukethwe	<0.05	<0.05	<0.05	<0.05

Izinkomba zingashintshwa ngokwezidingo zekhasimende.
Qaphela: Imikhiqizo isekela ukwenza ngendlela oyifisayo.

Izici{0}ezihlanzekile kakhulu ze-graphite zama-semiconductors

(1)Ukumelana nezinga lokushisa eliphezulu: -I-Purity Graphite yamaSemiconductors ingamelana namazinga okushisa acishe abe ngu-2300℃, nendawo yokuncibilika engu-3850±50℃kanye nendawo yokubilisa engu-4250℃. Uma ishiswa emazingeni okushisa aphezulu, ilahlekelwa isisindo esincane kakhulu futhi ine-coefficient ephansi yokwandisa okushisayo. Ngaphezu kwalokho, amandla ayo ayanda njengoba izinga lokushisa likhuphuka - liphindeka kabili ngo-2000 degree.

(2)I-Lubricity: Uma ama-graphite flakes emakhulu, iba ngcono i-coefficient ye-friction kanye nokusebenza kahle kakhulu kokugcotshwa.

(3)I-electrical and thermal conductivity: Iphatha ugesi kangcono izikhathi ezingu-100 kunezinto ezivamile{2}}ezingezona ezensimbi, futhi ukuqhutshwa kwayo kwe-thermal kuphakeme kunokwezinto eziyinsimbi njengensimbi nensimbi. Ngaphandle kwalokho, i-thermal conductivity yayo iyancipha njengoba izinga lokushisa likhuphuka, okwenza kube impahla eluhlaza enhle kakhulu yama-semiconductors.

(4)Ipulasitiki: Inokuqina okuhle; ingasongwa ibe amashidi amancane kakhulu futhi icindezelwe ephepheni legraphite.

(6) Ukumelana nokushaqeka okushisayo: Uma isetshenziswa ekamelweni lokushisa, ingamelana nokushintsha kwezinga lokushisa okunamandla ngaphandle kokulimala. Uma kwenzeka ukushintshashintsha okungazelelwe kwezinga lokushisa, ivolumu yayo ishintsha kancane, ngaleyo ndlela ivimbele imifantu ukuthi ingakhi.

Izinhlelo zokusebenza ze-High{0}Purity Graphite yama-Semiconductors

(1) Ngokwenziwa kukagesi: Udaka lwefilimu yokushisisa ngogesi, izihlungi ezibambayo, izithasiselo ze-electrode ye-fuel cell membrane, izinto zokusetshenziswa zamapuleti e-fuel cell bipolar, ama-conductive agents amabhethri e-lithium{1}}ion, ama-stealth shielding coatings, njll.

(2)I-thermal conductivity: Izinto ezisetshenziswayo zezakhi zikaphethiloli wenuzi, okokuthwala okushisayo, izinto zokusetshenziswa zamafilimu e-thermal conductive, ama-thermal conductive slurries, ama-thermal conductive fillers, izithasiselo zenjoloba ehambisa ukushisa, njll.

(3) Okokugcoba: Izithambisi eziqinile, izithasiselo zamafutha namafutha okugcoba, izithasiselo zokuguqulwa kwenjoloba,{1}}izinto zokuvala ezingagqwali, njll.